Dissociative adsorption of Si[sub 2]H[sub 6] on silicon at hyperthermal energies: The influence

Engstrom, J.R.; Xia, L.-Q.; Furjanic, M.J.; Hansen, D.A.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1821
Academic Journal
Investigates the reactions of Si[sub 2]H[sub 6] with the (100) and (111) surfaces of silicon. Use of supersonic molecular beam scattering techniques; Influence of incident translational energy on the probability of dissociative adsorption; Sensitivity of the reaction to the surface phase transformation; Importance of the dangling bond density.


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