Submicron contact hole filling by electron bias sputtering

Onuki, Jin; Nihei, Masayasu
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1798
Academic Journal
Details the development of an electron bias sputtering method capable of filling aluminum into submicron contact holes without degradation. Formation of reliable interconnections of very large scale integrated circuits; Feature of intermittent electron irradiation; Dimension of the contact holes.


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