TITLE

Submicron contact hole filling by electron bias sputtering

AUTHOR(S)
Onuki, Jin; Nihei, Masayasu
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1798
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Details the development of an electron bias sputtering method capable of filling aluminum into submicron contact holes without degradation. Formation of reliable interconnections of very large scale integrated circuits; Feature of intermittent electron irradiation; Dimension of the contact holes.
ACCESSION #
4294083

 

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