Calculation of InAs/AlSb(001) band offsets: Effect of strain and interfacial atomic structure

Dandrea, R.G.; Duke, C.B.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1795
Academic Journal
Calculates the valence band offset of strained indium arsenide (InAs) quantum wells grown on aluminum antimonide(001). Use of Hall effect measurement to study the amount electron charge in the quantum wells; Result of the decrease of InAs gap; Dependence of heterojunction electronic properties on the interfacial atomic composition.


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