Oriented nucleation and growth of diamond films on beta-SiC and Si

Kohl, R.; Wild, C.; Herres, N.; Koidl, P.; Stoner, B.R.; Glass, J.T.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1792
Academic Journal
Examines the oriented nucleation and growth of diamond films on beta-silicon carbide and silicon. Preparation of the film through microwave plasma chemical vapor deposition; Performance of the x-ray texture analysis with four circle x-ray.


Related Articles

  • Influence of substrate topography on the nucleation of diamond thin films. Dennig, Paul A.; Stevenson, David A. // Applied Physics Letters;9/23/1991, Vol. 59 Issue 13, p1562 

    Examines the effect of substrate topography on nucleation of diamond thin films. Production of a variety of substrate features on molybdenum and silicon substrates; Exposure of the substrates to hot filament chemical vapor deposition reactor during initial stages of nucleation; Features of...

  • Influence of nanoscale surface curvature on prenucleation phenomena in chemical vapor deposition.... Louchev, O.A.; Sato, Y. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p894 

    Investigates the influence of nanoscale surface curvature on nucleation behavior in chemical vapor deposition of diamond films. Implication of concave nanoscale curvature for adsorption energy; Significance of multimolecular collision for nucleation; Study on the adsorption-desorption kinetics...

  • Early stages of diamond growth by chemical-vapor deposition monitored both by electron spectroscopies and microstructural probes. Le Normand, F.; Arnault, J. C.; Parasote, V.; Fayette, L.; Marcus, B.; Mermoux, M. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1830 

    Presents information on a study which examined nucleation and growth kinetics of chemical vapor deposition diamond thin films on silicon. Background of the study; Methodology of the study; Results and discussion.

  • Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond.... Tae-Yeon Seong; Do-Geun Kim // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3368 

    Examines the bias-enhanced nucleation (BEN) and growth of diamond films by microwave plasma chemical vapor deposition. Use of transmission electron microscopy, transmission electron diffraction, atomic force microscopy and scanning electron microscopy; Epitaxial relations between silicon...

  • Nucleation and growth of diamond films on aluminum nitride coated nickel. Godbole, V.P.; Jagannadham, K. // Applied Physics Letters;8/28/1995, Vol. 67 Issue 9, p1322 

    Examines nucleation and growth characteristics of diamond (Au) films on aluminum nitride coated nickel. Effect of interposing graphite formation on Au adhesion; Application of Al coat to nickel using pulsed laser deposition; Deposition of nickel to Au by hot filament chemical vapor deposition...

  • Oriented diamond on graphite flakes. Suzuki, T.; Yagi, M. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p540 

    Examines the effect of substrates on the orientation of diamond particles deposited on the basal plane of graphite. Use of microwave plasma chemical vapor deposition; Nucleation behavior of diamond at the edge of the graphite; Stability of the plane of graphite in the presence of atomic hydrogen.

  • Growth of diamond films on boron nitride thin films by bias-assisted hot filament chemical vapor.... Polo, M.C.; Sanchez, G.; Wang, W.L.; Esteve, J.; Andujar, J.L. // Applied Physics Letters;3/31/1997, Vol. 70 Issue 13, p1682 

    Examines the growth of diamond films on boron nitride thin films through bias-assisted hot filament chemical vapor deposition. Effect of negative substrate biasing on nucleation density; Significance of hot filament deposition in nucleation; Impact of substrate biasing on nucleation density.

  • Structural evolution during chemical vapor deposition of diamond thin films. Morell, G.; Cancel, L. M.; Figueroa, O. L.; Gonz├ílez, J. A.; Weiner, B. R. // Journal of Applied Physics;11/15/2000, Vol. 88 Issue 10 

    In situ phase-modulated ellipsometry was employed to monitor the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The effective extinction coefficient (k) at 1.96 eV was used as a basis for dividing the deposition process into intervals. The film...

  • Investigation of bias enhanced nucleation of diamond on silicon. Gerber, J.; Sattel, S.; Ehrhardt, H.; Robertson, J.; Wurzinger, P.; Pongratz, P. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4388 

    Presents a study which examined bias enhanced nucleation of microwave chemical vapor deposited diamond films on silicon. Experimental details; Results; Discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics