Electron beam-enhanced etching of InAs in Cl[sub 2] gas and novel in situ patterning of GaAs

Miya, S.; Yoshida, T.; Kadoya, Y.; Akamatsu, B.; Noge, H.; Kano, H.; Sakaki, H.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1789
Academic Journal
Demonstrates an in situ patterning process of gallium arsenide (GaAs) and GaAs/aluminum GaAs heterostructures with an indium arsenide (InAs) mask layer. Etch rate of InAs by chlorine gas; Enhancement of the etch rate by electron beam irradiation; Formation of a fine V groove.


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