Traps for excitons and interstitial atoms in edge-defined film-fed growth silicon

Davies, Gordon; Seung-Chul Park; Higgs, V.
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1783
Academic Journal
Investigates traps for excitons and interstitial atoms in edge-defined film-fed growth silicon (EFG Si). Result of the application of cathodoluminescence topography to EFG Si; Creation of a radiation-damage complex; Absence of interstitial traps specific to EFG Si.


Related Articles

  • Depth correlated lateral variations of layer thickness in GaAs-AlGaAs multiple quantum wells.... Menniger, J.; Kostial, H. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2349 

    Investigates the lateral variations of the exciton confinement energy in a GaAs-AlGaAs multiple quantum well (MQW) structure. Utilization of cathodoluminescence imaging in a scanning electron microscope in the analysis; Utilization of molecular beam epitaxy in growing the MQW region; Connection...

  • Influence of exciton diffusion and localization on cathodoluminescence imaging of quantum well structures. Jahn, U.; Fujiwara, K.; Menniger, J.; Hey, R.; Grahn, H. T. // Journal of Applied Physics;2/1/1995, Vol. 77 Issue 3, p1211 

    Presents a study that examined the effect of exciton diffusion and localization on the cathodoluminescence (CL) intensity distribution in a single quantum well and a multiple quantum well structure prepared by growth interrupted molecular beam epitaxy. Use of scanning electron microscope;...

  • Dynamical spin separation induced by spin-dependent type-II band alignment in a diluted magnetic double quantum well. Koyama, T.; Kayanuma, K.; Souma, I.; Murayama, A.; Oka, Y. // Applied Physics Letters;5/22/2006, Vol. 88 Issue 21, p212106 

    Dynamical spin separation is demonstrated in a magnetic double quantum well composed of a diluted magnetic semiconductor well (MW) and a nonmagnetic well (NMW). Excitonic photoluminescence of the type-II transition between an electron in the NMW and a down-spin heavy hole (hh) in the MW is...

  • Energy shift of (100)Si/SiO2 interface traps resulting from avalanche hole injection. Vishnubhotla, Lakshmanna; Ma, T. P. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p1058 

    Discusses a study on the influence of avalanche injected holes on silicon/silicon oxide interface traps. Information on the metal-oxide-semiconductor capacitors used in the study; Major effect of avalanche hole injection; Energy shift and distribution of the radiation-induced interface traps...

  • Autosolitons in an electron�hole plasma/excitons system in silicon at 4.2 K. Musaev, A. M. // Semiconductors;Oct99, Vol. 33 Issue 10, p1076 

    Results are presented of the experimental discovery and study of auto-oscillations in an electron-hole plasma/excitons system in silicon under conditions of impact ionization of the excitons in a constant electric field. It is shown that the current auto-oscillations are due to disruption of the...

  • Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide. Zhuravlev, K. S.; Kobitsky, A. Yu. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1203 

    The kinetics of photoluminescence (PL) and steady-state PL from silicon nanocrystals formed in the SiO[sub 2] matrix by silicon ion implantation were studied experimentally for the first time in the temperature range from liquid-helium to room temperature. A dramatic increase in the...

  • Mean energy required to produce an electron-hole pair in silicon for photons of energies... Scholze, F.; Rabus, H.; Ulm, G. // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2926 

    Presents information on a study which determined the mean energy required to produce an electron-hole pair in silicon for photons. Measuring the spectral responsivity of selected silicon photodiodes; Development of a method for the calculation of photon and electron escape losses from the...

  • Photoluminescence of erbium-doped silicon: excitation power dependence. Ammerlaan, C. A. J.; Thao, D. T. X.; Gregorkiewicz, T.; Sobolev, N. A. // Semiconductors;Jun99, Vol. 33 Issue 6, p598 

    The intensity of the photoluminescence of erbium in silicon is analyzed by a model which takes into account the formation of free excitons, the binding of excitons to erbium ions, the excitation of inner-shell 4f electrons of erbium ions and their subsequent decay by light emission. Predictions...

  • The effect of excitons on apparent band gap narrowing and transport in semiconductors. Kane, D. E.; Swanson, R. M. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1193 

    Focuses on a study which analyzed the thermodynamics of excitons in silicon below the Mott transition. Background on the interactions between electrons, holes and ionized impurities in heavily doped semiconductors; Information on excitonic states; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics