TITLE

Traps for excitons and interstitial atoms in edge-defined film-fed growth silicon

AUTHOR(S)
Davies, Gordon; Seung-Chul Park; Higgs, V.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1783
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates traps for excitons and interstitial atoms in edge-defined film-fed growth silicon (EFG Si). Result of the application of cathodoluminescence topography to EFG Si; Creation of a radiation-damage complex; Absence of interstitial traps specific to EFG Si.
ACCESSION #
4294078

 

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