Formation of four new shallow emissions in Mn[sup +] ion-implanted GaAs grown by molecular beam

Honglie Shen; Makita, Yunosuke; Niki, Shigeru; Yamada, Akimasa; Iida, Tsutomu; Shibata, Hajime; Obara, Akira
September 1993
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1780
Academic Journal
Details the implantation of Mn[sup +] into ultrapure gallium arsenide layers grown by molecular beam epitaxy. Formation of four shallow emissions; Comparison between the energy levels of the emissions and the shallow acceptor-doped GaAs; Inability of producing [g-g] like energy levels.


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