TITLE

Epitaxial growth of BaMgF[sub 4] films on Si(100) and (111) substrates: An approach to

AUTHOR(S)
Aizawa, Kouji; Ishiwara, Hiroshi; Kumagai, Masao
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1765
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the growth of BaMgFa[sub 4] films using the molecular beam epitaxy on both silicon (100) and (111) substrates. Determination of the best channeling minimum yield in Rutherford backscattering spectrometry; Composition of the films; Reflection of the film orientation on the substrate symmetry.
ACCESSION #
4294071

 

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