TITLE

High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

AUTHOR(S)
Hayakawa, T.; Matsumoto, K.; Morishima, M.; Nagai, M.; Horie, H.; Ishigame, Y.; Isoyama, A.; Niwata, Y.
PUB. DATE
September 1993
SOURCE
Applied Physics Letters;9/27/1993, Vol. 63 Issue 13, p1718
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines high power aluminum gallium arsenide quantum well laser diodes. Preparation of the devices by molecular beam epitaxy; Types of laser structures fabricated; Confirmation of the good reliability of the device.
ACCESSION #
4294055

 

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