TITLE

Electrically active, ion implanted boron at the solubility limit in silicon

AUTHOR(S)
Liefting, J.R.; Schreutelkamp, R.J.; Vanhellemont, J.; Vandervorst, W.; Maex, K.; Custer, J.S.; Saris, F.W.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1134
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the electrically active ion implanted boron (B) at the solubility limit in silicon. Causes of the development of dislocation formation during a subsequent thermal anneal; Generation of crystal damage in Si ion implantation; Implication of thermal anneals for Si interstitial agglomeration to form extrinsic dislocations.
ACCESSION #
4294045

 

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