Electrically active, ion implanted boron at the solubility limit in silicon

Liefting, J.R.; Schreutelkamp, R.J.; Vanhellemont, J.; Vandervorst, W.; Maex, K.; Custer, J.S.; Saris, F.W.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1134
Academic Journal
Examines the electrically active ion implanted boron (B) at the solubility limit in silicon. Causes of the development of dislocation formation during a subsequent thermal anneal; Generation of crystal damage in Si ion implantation; Implication of thermal anneals for Si interstitial agglomeration to form extrinsic dislocations.


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