Disordering and compensation in Si-doped AlGaAs/GaAs superlattices using Ga- and As-rich

Olmsted, B.L.; Houde-Walter, S.N.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1131
Academic Journal
Examines the role of defect diffusion from the crystal surface in the disordering of a silicon (Si)-doped multiple quantum well structure during molecular beam epitaxy. Analysis on aluminum-gallium (Ga) interdiffussion coefficients of Si-doped and undoped superlattices when annealed with excess Ga; Factors influencing the development of Fermi-level enhancement.


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