TITLE

Gas-source molecular beam epitaxy growth of Ga[sub x]In[sub 1-x]As[sub y]P[sub 1-y] lattice

AUTHOR(S)
Zhang, G.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1128
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the gas-source molecular beam epitaxy growth of Ga[sub x]In[sub 1-x]As[sub y]P[sub 1-y] layers lattice matched to gallium arsenide. Use of x-ray diffraction, photoluminescence and Hall measurements; Preparation of high-quality heterojunctions and quantum well structures; Presence of energy band gaps varying in a wide range in lattice-matched layers.
ACCESSION #
4294043

 

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