TITLE

Enhancement of electrical activation of ion-implanted phosphorus in Si(100) through two-step

AUTHOR(S)
Yu, N.; Ma, K.B.; Kirschbaum, C.; Varahramyan, K.; Chu, W.K.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1125
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines an enhancement of ion-implanted phosphorus activation in silicon through a two-step thermal annealing process. Description of a two-step process; Implication of regrowth process separation from the activation process for electrical activation; Consideration of ion implantation combined with thermal annealing as a standard doping process.
ACCESSION #
4294042

 

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