TITLE

Sb/GaSb heterostructures and multilayers

AUTHOR(S)
Golding, T.D.; Dura, J.A.; Wang, W.C.; Vigilante, A.; Moss, S.C.; Chen, H.C.; Miller Jr., J.H.; Hoffman, C.A.; Meyer, J.R.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1098
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the epitaxial growth of antimony (Sb) films on gallium antimonide (GaAs) substrates. Influence of a confinement-induced positive energy gap on nonlinear optical switches; Exploitation of the long mean free path in Sb for quantum transport evaluation; Application of Sb/GaAs system to electronic devices incorporating heterostructures.
ACCESSION #
4294033

 

Related Articles

  • Epitaxial integration of single crystal C[sub 60]. Dura, J.A.; Pippenger, P.M. // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3443 

    Examines the growth of a single crystal thin films of (111) oriented buckminsterfullerene (C[sub 60]) on epitaxial layers of single crystal antimony [Sb]. Properties of C[sub 60]; Confirmation of C[sub 60]/Sb epitaxy by low-energy electron diffraction; Results of the X-ray diffraction analysis.

  • Solid phase epitaxy and doping of Si through Sb-enhanced recrystallization of polycrystalline Si. Gong, S. F.; Hentzell, H. T. G.; Radnoczi, G.; Charai, A. // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p902 

    We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high...

  • Molecular beam epitaxy growth of InSb films on GaAs. Davis, John L.; Thompson, Phillip E. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2235 

    InSb films have been grown by molecular beam epitaxy on GaAs substrates. The procedure incorporated a low-temperature (300 °C) growth of a thin (300 Å) InSb interface layer prior to the InSb active layer growth at 380 °C. A beam equivalent pressure ratio of Sb4 to In of 4 led to...

  • Investigation of mechanisms of vacancy generation in silicon in the... Helmer, S.B.; Jones, K.S. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p583 

    Studies the perturbance in silicon vacancy concentration induced by the presence of TiSi2 films. Use of antimony in silicon doping as vacancy detector; Stress compensation mechanism; Volume contraction mechanism.

  • Activation volume for antimony diffusion in silicon and implications for strained films. Zhao, Yuechao; Aziz, Michael J. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p941 

    Studies activation volume for antimony diffusion in silicon and its implications for strained films. Use of results for hydrostatic pressure to predict the effect of biaxial strain on antimony diffusion; Predominance of the vacancy mechanism for antimony diffusion; Capability for predicting the...

  • Optical switching property of a light-induced pinhole in antimony thin film. Fukaya, Toshio; Tominaga, Junji; Nakano, Takashi; Atoda, Nobufumi // Applied Physics Letters;11/15/1999, Vol. 75 Issue 20, p3114 

    Studies the optical switching property of a light-induced pinhole in antimony thin film. Estimation of the dependence of transmittance against input light power; Maximum input intensities measured at the focus point; Transmittance change versus input light power.

  • Effect of dopant incorporation on structural and electrical properties of sprayed SnO2:Sb films. Goyal, D. J.; Agashe, Chitra; Marathe, B. R.; Takwale, M. G.; Bhide, V. G. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7520 

    Studies the effect of dopant incorporation on the structural and electrical properties of sprayed SnO[sub2]:antimony films. Details on the experiment; Results of the study; Conclusions.

  • Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO. Mandalapu, L. J.; Yang, Z.; Liu, J. L. // Applied Physics Letters;6/18/2007, Vol. 90 Issue 25, p252103 

    Au/Ni contacts were fabricated on Sb-doped p-type ZnO film, which was grown on n-type Si (100) substrate with a thin undoped ZnO buffer layer by molecular beam epitaxy. As-deposited contacts were rectifying while Ohmic behavior was achieved after thermally annealing the contacts in nitrogen...

  • Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. Nguyen, Thang; Varhue, Walter; Cross, Michael; Pino, Robinson; Adams, Edward; Lavoie, Mark; Lee, Jaichan // Journal of Applied Physics;4/1/2007, Vol. 101 Issue 7, p073707 

    This paper describes the structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. The growth process used a combination of atomic sources which included the rf sputtering of Sb and the thermal effusion of Ga. The formation of crystalline GaSb thin films...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics