TITLE

Dopant compensation effects on impurity trapping and electrical resistivity of ion implanted

AUTHOR(S)
Coffa, S.; Poate, J.M.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1080
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effects of ion implanted amorphous silicon on impurity trapping and electrical resistivity. Influence of boron and phosphorus on the resistivity of amorphous silicon; Effect of dopants on the Fermi level position; Occurrence of the dopant compensation phenomena in the epitaxial crystallization of silicon.
ACCESSION #
4294025

 

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