Dopant compensation effects on impurity trapping and electrical resistivity of ion implanted

Coffa, S.; Poate, J.M.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1080
Academic Journal
Investigates the effects of ion implanted amorphous silicon on impurity trapping and electrical resistivity. Influence of boron and phosphorus on the resistivity of amorphous silicon; Effect of dopants on the Fermi level position; Occurrence of the dopant compensation phenomena in the epitaxial crystallization of silicon.


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