TITLE

Er luminescence centers in GaAs grown by migration-enhanced epitaxy

AUTHOR(S)
Taguchi, Akihito; Kawashima, Minoru; Takahei, Kenichiro; Horikoshi, Yoshiji
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1074
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the erbium (Er) luminescence centers in gallium arsenide grown by migration-enhanced epitaxy. Comparison between the photoluminescence spectra grown above 400 and 300 degrees Celsius (C); Changes in the spectra of the samples grown at 300 degrees C; Formation of stable Er luminescence centers at 400 and 500 degrees C.
ACCESSION #
4294023

 

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