Ion channeling effect on lattice relaxation in strained In[sub 1-x]Ga[sub x]As/InP

Takahashi, Yukimi; Kuriyama, K.; Matsui, Y.; Kamijoh, T.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1071
Academic Journal
Describes the ion channeling effect of strained In[sub 1-x]Ga[sub x]As/InP multiple-quantum-well (MQW) structure. Enhancement of the dechanneling in the substrate with strained MQW structure; Production of distortion in the interface between the buffer layer and MQW structure; Comparison of ion channeling between the partially relaxed and strained structures.


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