TITLE

Ion channeling effect on lattice relaxation in strained In[sub 1-x]Ga[sub x]As/InP

AUTHOR(S)
Takahashi, Yukimi; Kuriyama, K.; Matsui, Y.; Kamijoh, T.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1071
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the ion channeling effect of strained In[sub 1-x]Ga[sub x]As/InP multiple-quantum-well (MQW) structure. Enhancement of the dechanneling in the substrate with strained MQW structure; Production of distortion in the interface between the buffer layer and MQW structure; Comparison of ion channeling between the partially relaxed and strained structures.
ACCESSION #
4294022

 

Related Articles

  • Tunneling and transverse wave vector conservation in GaAs/AlGaAs heterostructures. Lebens, John A.; Silsbee, Robert H.; Wright, Steven L. // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p840 

    We have studied transverse wave vector conservation in the tunneling of electrons between a quantum well and an n+ electrode while varying the density of electrons in the well. The sample is a ‘‘tunnel capacitor’’ structure in which a GaAs well is separated by an AlGaAs...

  • Surface breaking crack evaluation with photorefractive quantum wells and laser-generated Rayleigh waves. Matsuda, Youichi; Nakano, Hidetoshi; Nagai, Satoshi; Hiratsuka, Hajime // Applied Physics Letters;10/23/2006, Vol. 89 Issue 17, p171902 

    An adaptive laser ultrasound system using optical two-wave mixing technique with photorefractive quantum wells is developed for crack characterization in noisy environments. AlGaAs/GaAs photorefractive multiple quantum wells featuring a quick response time of 9.1 μs cancel disturbances below...

  • Decreasing the role of transverse spatial electron transport and increasing the output power of heterostructure field-effect transistors. Lukashin, V.; Pashkovskii, A.; Zhuravlev, K.; Toropov, A.; Lapin, V.; Sokolov, A. // Technical Physics Letters;Sep2012, Vol. 38 Issue 9, p819 

    We present the first results of development of high-power field-effect transistors (FETs) based on a GaAs heterostructure with quantum well and additional potential barriers optimized to reduce the role of transverse spatial electron transport, which leads to a 1.5-fold increase in the output...

  • GaAlAs buried multiquantum well lasers fabricated by diffusion-induced disordering. Fukuzawa, Tadashi; Semura, Shigeru; Saito, Hiroshi; Ohta, Tsuneaki; Uchida, Yoko; Nakashima, Hisao // Applied Physics Letters;1984, Vol. 45 Issue 1, p1 

    A new transverse-mode-controlled laser called a buried multiquantum-well (BMQW) laser has been developed. In order to make it possible to bury the MQW laser active region utilizing the diffusion-induced disordering (DID) of GaAs-GaAlAs MQW, zinc was selectively diffused into the MQW structure,...

  • Electro-absorptive properties of interdiffused in GaAsP/InP quantum wells. Li, E. Herbert; Choy, Wallace C.H. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3861 

    Studies the effects of Group III and Group V interdiffusions with a varied as-grown well width and P concentration in the quaternary InGaAsP quantum well material. Features of multiple mini-well profiles; Interdiffusion of the Group III elements with a well width of 10nm; Electro-absorptive...

  • A study of GaAs/AIGaAs p-type quantum well infrared photodetectors with different barrier... Liu, H.C.; Li, L.; Buchanan, M.; Wasilewski, Z. R.; Brown, G. J.; Szmulowicz, F.; Hegde, S. M. // Journal of Applied Physics;1/1/1998, Vol. 83 Issue 1, p585 

    Studies a set of GaAs/AIGaAs p-type quantum well infrared photodetectors with varying barrier heights. Experimental procedure used; Definition of the samples used in the study; Results of the findings.

  • Comparison of band-filling and gain models for multiple-quantum-well lasers. Heinamaki, A.; Tulkki, J. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3268 

    Investigates the effects of the overlap factor and the band-filling model on the gain of quantum well lasers. Energy bands in multiple-quantum-well structure; Quasi-Fermi energies; Material gain; Conduction and valence band; Gain calculations; Threshold current.

  • Refractive index of interdiffused AlGaAs/GaAs quantum well. Li, E. Herbert // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6251 

    Analyzes a refractive index of interdiffused AlGaAs/GaAs quantum well. Definition of the theoretical model; Results and discussion of the analysis.

  • Investigation of L-related indirect transitions in GaAs/GaAlAs multiquantum wells under... Dai, N.; Huang, D. // Journal of Applied Physics;12/15/1997, Vol. 82 Issue 12, p6359 

    Investigates the L-related indirect transitions in GaAs/GaAlAs multiquantum wells under hydrostatic pressure. Characteristics of the semiconductor quantum wells (QWs);

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics