TITLE

Quantum wires prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers

AUTHOR(S)
Eberl, K.; Grambow, P.; Lehmann, A.; Kurtenbach, A.; Klitzing, K.V.; Heitmann, D.; Dilger, M.; Hohenstein, M.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1059
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops quantum wires by molecular beam epitaxy regrowth on patterned aluminum gallium arsenide buffer layers. Lateral confinement in the quantum wires; Dependence of the electronic width on wire orientation; Confinement energies for different wire orientations.
ACCESSION #
4294018

 

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