Quantum wires prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers

Eberl, K.; Grambow, P.; Lehmann, A.; Kurtenbach, A.; Klitzing, K.V.; Heitmann, D.; Dilger, M.; Hohenstein, M.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1059
Academic Journal
Develops quantum wires by molecular beam epitaxy regrowth on patterned aluminum gallium arsenide buffer layers. Lateral confinement in the quantum wires; Dependence of the electronic width on wire orientation; Confinement energies for different wire orientations.


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