Low-temperature synthesis of BaTiO[sub 3] thin films on silicon substrates by hydrothermal reaction

Bacsa, R.R.; Dougherty, J.P.; Pilione, L.J.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1053
Academic Journal
Describes the low-temperature synthesis of barium titanate thin films on silicon (Si) substrates by hydrothermal reaction. Reaction between the Si substrate and the titanium (Ti) film; Prevention of Si diffusion through the Ti layer; Effect of the reaction between titanium carbide and the Ti layer on film adherence.


Related Articles

  • Synthesis and ferroelectric properties of c-axis oriented Bi[sub 4]Ti[sub 3]O[sub 12] thin films.... Haoshuang Gu; Anxiang Kuang // Applied Physics Letters;2/26/1996, Vol. 68 Issue 9, p1209 

    Examines the ferroelectric properties of c-axis oriented bismuth titanate thin films by sol-gel process on platinum (Pt) coated silicon (Si). Preparation of thin films on Pt/titanium/Si (111) substrates; Fabrication of crack-free films using a multilayer spinning technique; Average grain size...

  • Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor deposition. Yoon, Y. S.; Kang, W. N.; Shin, H. S.; Yom, S. S.; Kim, T. W.; Lee, Jong Yong; Choi, D. J.; Baek, S-S. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1547 

    Focuses on a study which examined ferroelectric barium titanate thin films grown on silicon substrates by in situ metalorganic chemical vapor deposition. Description of barium titanate; Composition of the carrier gas; Details on the results.

  • Thin-film interactions in Si/SiO2/W-Ti/Al-1% Si system. Chang, Peng-Heng; Liu, Hung-Yu; Keenan, J. A.; Anthony, J. M.; Bohlman, J. G. // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2485 

    Provides information on a study which investigated the thin-film metal-metal interactions in a silicon compound system using transmission electron microscopy, glancing angle x-ray diffraction, Rutherford backscattering spectrometry. Methods; Results; Discussion.

  • Interfacial reactions of nickel thin films on BF+2-implanted (001)Si. Chen, W. J.; Chen, L. J. // Journal of Applied Physics;9/1/1991, Vol. 70 Issue 5, p2628 

    Presents information on a study which examined interfacial reactions of nickel thin films on implanted silicon. Methods; Results; Discussion.

  • Generation of charged nanoparticles and their deposition during the synthesis of silicon thin films by chemical vapor deposition. Chan-Soo Kim; Woong-Kyu Youn; Nong-Moon Hwang // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p014313 

    Generation of charged nanoparticles in the gas phase has been frequently reported in many chemical vapor deposition (CVD) processes. In an effort to confirm whether charged nanoparticles are generated during the synthesis of silicon films by CVD, a differential mobility analyzer combined with a...

  • Self-propagating, high-temperature combustion synthesis of rhombohedral AlPt thin films. Adams, D. P.; Rodriguez, M. A.; Tigges, C. P.; Kotula, P. G. // Journal of Materials Research;Dec2006, Vol. 21 Issue 12, p24 

    Sputter-deposited, Al/Pt multilayer thin films of various designs exhibited rapid, self-propagating, high-temperature reactions. With reactant layers maintained at ∼21 °C prior to ignition and films adhered to oxide-passivated silicon substrates, the propagation speeds varied from...

  • Formation of ultrahigh density Ge nanodots on oxidized Ge/Si(111) surfaces. Nakamura, Yoshiaki; Nagadomi, Yasushi; Sugie, Kaoru; Miyata, Noriyuki; Ichikawa, Masakazu // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p5014 

    Ge nanodots with a typical size of ∼4 nm and ultrahigh density (>1012 cm-2) were grown on ultrathin SixGe1-x oxide films made by oxidizing Ge wetting layers grown on Si (111)–(7×7) surfaces. The density of the nanodots was independent of the Ge deposition rate, indicating that...

  • Pulsed excimer laser ablated barium titanate thin films. Roy, D.; Krupanidhi, S.B. // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2057 

    Examines the deposition of barium titanate (BaTiO[sub 3]) thin films on platinum coated silicon substrates by excimer laser ablation. Crystallinity of the deposited films; Exhibition of the film dielectric constant; Investigation of ferroelectricity by observing polarization hysteresis.

  • Microscale oscillating crack propagation in silicon nitride thin films. Kim, Donghyun; Makaram, Prashanth; Thompson, Carl V. // Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p071902 

    Controlled microscale (<50 μm) wavy cracks in silicon nitride thin films have been produced through a simple heating process. The crack paths were controlled by metal patterns under the silicon nitride thin films. Wavy crack characteristics were investigated by changing the metal, metal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics