TITLE

Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy

AUTHOR(S)
Anan, Takayoshi; Sugou, Shigeo; Nishi, Kenichi
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1047
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Evaluates the improvement of indium phosphide/indium gallium arsenide (InGaAs) heterointerfaces grown by gas source molecular beam epitaxy. Effect of atom substitutions on the reaction of the InGaAs surface under P[sub 2] beam exposure; Proposal on a switching sequence excluding surface gallium atoms; Increase of photoluminescence intensity in the superlattices.
ACCESSION #
4294014

 

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