TITLE

Shallow angle lapping of III-V semiconductor thin layer structures by an ion beam/chemical

AUTHOR(S)
Eckart, D.W.; Casas, L.M.
PUB. DATE
August 1993
SOURCE
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1041
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the shallow lapping of III-V semiconductor thin layer structures by an ion beam/chemical etching technique. Use of the method to measure the layer thickness of a wafer; Utilization of the technique to probe the interlayer lattice mixing; Usefulness of the relative layer thicknesses in the evaluation of growth parameters.
ACCESSION #
4294012

 

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