Shallow angle lapping of III-V semiconductor thin layer structures by an ion beam/chemical

Eckart, D.W.; Casas, L.M.
August 1993
Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1041
Academic Journal
Describes the shallow lapping of III-V semiconductor thin layer structures by an ion beam/chemical etching technique. Use of the method to measure the layer thickness of a wafer; Utilization of the technique to probe the interlayer lattice mixing; Usefulness of the relative layer thicknesses in the evaluation of growth parameters.


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