In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As

Gerard, Jean-Michel
October 1992
Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2096
Academic Journal
Examines the growth mode shift upon indium arsenide deposition by molecular beam epitaxy on a pseudomorphic buffer layer grown on gallium arsenide. Sensitivity of the shift critical thickness to indium composition; Surface segregation of indium atoms; Impact of film thickness on the growth mode.


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