TITLE

In-depth distribution of ion irradiation defects evaluated by mobility of

AUTHOR(S)
Takeuchi, Yukihiro; Soga, Hajime; Ueno, Yoshiki; Kanayama, Toshihiko; Sugiyama, Yoshinobu; Tacano, Munecazu
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2084
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines semiconductor ion irradiation defects using low temperature mobility of two-dimensional electron gas. Evaluation of the defect depth distribution; Cause of defect penetration in deep regions; Proportionality of the scattering-center density to the mobility reciprocal.
ACCESSION #
4293989

 

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