In-depth distribution of ion irradiation defects evaluated by mobility of

Takeuchi, Yukihiro; Soga, Hajime; Ueno, Yoshiki; Kanayama, Toshihiko; Sugiyama, Yoshinobu; Tacano, Munecazu
October 1992
Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2084
Academic Journal
Examines semiconductor ion irradiation defects using low temperature mobility of two-dimensional electron gas. Evaluation of the defect depth distribution; Cause of defect penetration in deep regions; Proportionality of the scattering-center density to the mobility reciprocal.


Related Articles

  • Generation of divacancies in tin-doped silicon. Svensson, B. G.; Svensson, J.; Lindström, J. L.; Davies, G.; Corbett, J. W. // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2257 

    Czochralski-grown tin-doped silicon samples have been irradiated by 2 MeV electrons at room temperature. The concentration of divacancies is studied as a function of bombardment dose, and as a function of temperature during a subsequent isochronal annealing. The results are compared with that...

  • In situ Hall measurement of two-dimensional electron gas at Al[sub 0.3]Ga[sub 0.7]As/GaAs.... Kanayama, Toshihiko; Takeuchi, Yukihiro // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1402 

    Demonstrates two-dimensional electron gas (2DEG) at aluminum gallium arsenide/gallium arsenide interface. Irradiation of 2DEG by argon ions; Effect of channeling on irradiation defects; Performance of isochronal anneals for the thermal behavior of created defects.

  • Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons. Lebedev, A. A.; Veinger, A. I.; Davydov, D. V.; Kozlovskii, V. V.; Savkina, N. S.; Strel�chuk, A. M. // Semiconductors;Sep2000, Vol. 34 Issue 9, p1016 

    Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced...

  • Reduction of interface-trap density in metal-oxide-semiconductor devices by irradiation. Balasinski, Artur; Ma, T.P. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3170 

    Demonstrates the annealing of interface defects in metal oxide semiconductor (MOS) devices by x-ray irradiation. Effects of high-field Fowler-Nordheim electron injection on rad-hard devices; Use of the capacitance-voltage technique to characterize MOS devices; Occurrence of x-ray-induced...

  • Interaction between radiation-induced defects and the Pt-related center in silicon. Weng, Y. M.; Ohta, E.; Sakata, M. // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2206 

    The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220–140 °C for the A and E centers, respectively. The level Ea...

  • A new polymeric medium for optical phase-modulated recording with diffusion enhancement. Gritsaĭ, Yu. V.; Mogils'nyĭ, V. V. // Technical Physics Letters;Jan2006, Vol. 32 Issue 1, p10 

    A new photorecording material for the phase holography with postexposure enhancement in the near-UV spectral region has been developed based on xanthone-doped poly(methyl methacrylate). It is demonstrated that the main role in the postexposure hologram enhancement in this medium is played by...

  • Hole-induced transient bandgap renormalization: A mechanism for photo-induced absorption in defect-engineered semiconductors. Juodawlkis, Paul W.; Ralph, Stephen E. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    In semiconductors, photoexcitation often results in a transient band edge-absorption bleaching due to the dominance of conduction-band filling over bandgap renormalization. In this letter, we show that the presence of electron traps can act to reverse this behavior so that photoexcitation...

  • Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structures. Griscom, David L. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2524 

    Presents a study that investigated the radiation-induced point defects distributed in thermally grown silicon oxide-on-silicon metal-oxide-semiconductors. Information on the radiation damage processes in amorphous silicon oxide; Details on a model for post-irradiation interface-state buildup;...

  • Hole Gas Induced by Defects in Ge/Si Core-Shell Nanowires. Park, J.-S.; Ryu, B.; Moon, C.-Y.; Chang, K. J. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p303 

    We investigate the defect levels of surface Si dangling bond (DB) and substitutional Au defects at/near the surfaces of Ge/Si core-shell nanowires through spin-polarized density-functional calculations. Both surface Si DB and substitutional Au defects induce hole carriers in the Ge core by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics