Growth morphology of epitaxial ErAs/GaAs by x-ray extended range specular reflectivity

Miceli, P.F.; Palmstrom, C.J.; Moyers, K.W.
October 1992
Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2060
Academic Journal
Investigates the growth morphology of erbium arsenide epitaxial layers on [001]gallium arsenide using x-ray specular reflectivity. Effect of specular and diffuse scattering on reflectivity measurement; Preparation of samples by molecular beam epitaxy; Implication of binomial fluctuations for atomic layer completion.


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