TITLE

Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers

AUTHOR(S)
Yazawa, M.; Koguchi, M.; Muto, A.; Ozawa, M.; Hiruma, K.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2051
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the epitaxial growth of indium arsenide nanowhiskers on a gold atom deposited substrate. Induction of growth by ultrafine alloy droplets; Fabrication of gallium arsenide substrate by reactive plasma ion etching; Mechanism for the nanowhisker growth on a nanometer scale.
ACCESSION #
4293978

 

Related Articles

  • Polarization dependence of light emitted from GaAs p-n junctions in quantum wire crystals. Haraguchi, K.; Katsuyama, T.; Hiruma, K. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p4220 

    Presents information on a study which performed micro p-n junctions in gallium arsenide nanowhiskers by metalorganic vapor phase epitaxy. Methodology of the study; Results and discussion; Conclusion.

  • Molecular beam epitaxial regrowth on in situ plasma-etched AlAs/AlGaAs heterostructures. Choquette, Kent D.; Hong, M. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1738 

    Investigates the epitaxial regrowth on dry etched heterostructures possessing aluminum arsenide surfaces. Techniques for achieving epitaxial regrowth; Avoidance of atmospheric exposure before regrowth; Microstructural analysis of the overgrown layers; Presence of microtwin plates in the regrown...

  • Real-time, in situ monitoring of GaAs and AlGaAs photoluminescence during plasma processing. Mitchell, Annette; Gottscho, Richard A.; Pearton, Stephen J.; Scheller, Geoffrey R. // Applied Physics Letters;2/26/1990, Vol. 56 Issue 9, p821 

    Monitoring wafer changes in situ during plasma treatment provides real-time feedback for developing and controlling device processing. In this letter we report the use of photoluminescence spectroscopy to monitor epitaxial films of Al0.3Ga0.7As and semi-insulating GaAs substrates during BCl3...

  • Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy. Richter, H. J.; Smith, R. S.; Herres, N.; Seelmann-Eggebert, M.; Wennekers, P. // Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p99 

    X-ray photoelectron spectroscopy has been used to investigate thin single-crystal films of ytterbium arsenide grown epitaxially on GaAs by molecular beam epitaxy. Sputter profiles indicate the absence of oxide impurities and the presence of only trivalent ytterbium, which means that the...

  • Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron.... Watanabe, Heiji; Matsui, Shinji // Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3011 

    Develops an electron-beam (EB)-assisted dry etching technique for gallium arsenide. Use of argon electron cyclotron resonance plasma as an electron shower source; Dependence of ion beam and EB current density on acceleration voltage and polarity; Results of photoluminescence measurement;...

  • Influence of carrier capture on the quantum efficiency of as-etched and epitaxially buried.... Lehr, G.; Bergmann, R. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p517 

    Examines In[sub 0.53]Ga[sub 0.47]As/InP quantum wires with the use of electron beam lithography dry etching and epitaxial regrowth step. Impact of carrier loss mechanisms in the barrier on the quantum efficiency of wires; Display of orientational dependence of the overgrowth behavior; Comparison...

  • Plasma etch effects on low-temperature selective epitaxial growth of silicon. Lou, Jen-Chung; Oldham, William G.; Kawayoshi, Harry; Ling, Peiching // Journal of Applied Physics;4/1/1992, Vol. 71 Issue 7, p3225 

    Provides information on a study that investigated the effects of plasma etching on selective epitaxial growth of silicon. Details on the epitaxial procedure; Results and discussion; Conclusions.

  • Properties of GaAs Nanowhiskers Grown on a GaAs(111)B Surface Using a Combined Technique. Tonkikh, A. A.; Cirlin, G. E.; Samsonenko, Yu. B.; Soshnikov, P.; Ustinov, V. M. // Semiconductors;Oct2004, Vol. 38 Issue 10, p1217 

    Arrays of GaAs whiskers on GaAs(111)B substrates were grown using a technique combining vacuum evaporation and molecular-beam epitaxy. The surface structural properties of the samples obtained were studied by scanning electron microscopy. It was found that the areal density of the whiskers...

  • Computer simulation of the growth of GaAs nanowhiskers with inhomogeneous crystal structures. Lubov, M. N.; Kulikov, D. V.; Trushin, Yu. V. // Technical Physics Letters;Feb2009, Vol. 35 Issue 2, p99 

    A physical model is proposed for the growth of GaAs nanowhiskers (NWs) with inhomogeneous crystal structures during the molecular beam epitaxy. Numerical calculations performed using this model give the temporal variation of the growth rate and the height of NWs and indicate the moments of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics