TITLE

Lattice relaxed impurity and persistent photoconductivity in nitrogen doped 6H-SiC

AUTHOR(S)
Dissanayake, A.S.; Jiang, H.X.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2048
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the impurity properties in n-type nitrogen doped single crystal 6H-silicon carbide semiconductors by conductivity measurements. Observation of the dark current and persistent photoconductivity slow decay; Attainment of different energy barriers; Measurement of the electron capture and emission barrier.
ACCESSION #
4293977

 

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