GaAs surface modification by room-temperature hydrogen plasma passivation

Euijoon Yoon; Gottscho, Richard A.; Donnelly, Vincent M.; Luftman, Henry S.
May 1992
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2681
Academic Journal
Examines the role of hydrogen atoms in enhancing the photoluminescence intensity of native-oxide-contaminated gallium arsenide. Consistency of the surface oxide with a reduction in surface recombination velocity; Stability of the passivated surface.


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