TITLE

Electrical properties of oxide-nitride dielectric films incorporating passivation oxide on

AUTHOR(S)
Chan, Hiang C.; Mathews, Viju K.; Fazan, Pierre C.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2645
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the leakage current of electron trapping in oxide/nitride dielectric films with a passivation. Absence of passivation on rugged polysilicon and dielectric films; Formation of thinner silicide nitride films; Increase of electron trap density in the nitride.
ACCESSION #
4293939

 

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