TITLE

Passivation of (111) Si/SiO[sub 2] interface by fluorine

AUTHOR(S)
Wang, X.W.; Ma, T.P.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2634
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of fluorine on the radiation hardness of (111) silicon/silicon dioxide interface. Distribution of interface traps for a set of x-ray irradiated metal oxide semiconductors capacitors; Monotical improvement of radiation-induced interface traps; Passivation of the precursor for the formation of the characteristic defect.
ACCESSION #
4293935

 

Related Articles

  • Early stages of interface-trap transformation in metal-SiO2-(100)Si structures. Wang, Yu; Ma, T. P.; Barker, R. C. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2520 

    Presents a study that examined the interface-trap transformation in metal-silicon dioxide-silicon semiconductors. Methodology; Analysis of the capacitance-voltage characteristics of the samples; Examination of the interface-trap distribution in the metal-oxide-semiconductors.

  • Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique. Hung, K. K.; Cheng, Y. C. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4204 

    Presents a study which aimed to characterize the silicon-silica interface traps in p-metal-oxide-semiconductor structures with very thin gate oxides by conductance and quasistatic techniques. Review of the theory of the conductance technique; Description of the hole capture cross section;...

  • Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Palmer, M. J.; Braithwaite, G.; Grasby, T. J.; Phillips, P. J.; Prest, M. J.; Parker, E. H. C.; Whall, T. E.; Parry, C. P.; Waite, A. M.; Evans, A. G. R.; Roy, S.; Watling, J. R.; Kaya, S.; Asenov, A. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1424 

    The room-temperature effective mobilities of pseudomorphic Si/Si[sub 0.64]Ge[sub 0.36]/Si p-metal-oxidesemiconductor field effect transistors are reported. The peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO[sub 2]/Si interface roughness is a...

  • Determination of oxide fixed charge at the top and bottom Si/SiO[sub 2] interfaces of.... Arnold, Emil // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3027 

    Characterizes the silicon-on-insulator (SOI) allowing separate determination of oxide fixed charges at silicon (Si)/Si dioxide interfaces. Use of the depletion-type metal oxide semiconductor in characterizing thin SOI devices; Information on bias voltage determinants; Determination of oxide...

  • The Role of Non-abrupt Interfaces in SiC MOS Devices: Quantum Mechanical Simulations and Experiments. de Oliveira, E. L.; de Sousa, J. S.; Freire, V. N.; de Vasconcelos, E. A.; da Silva Jr., E. F. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1487 

    A numerical analysis of SiC/SiO2 MOS devices is performed focusing on the role of non-abrupt interfaces. We show that non-abrupt interfaces affects the shape of capacitance-voltage curves increasing accumulation and inversion capacitances in comparison to ideal abrupt models which may lead to...

  • Process-induced positive charges in Hf-based gate stacks. Zhao, C. Z.; Zhang, J. F.; Chang, M. H.; Peaker, A. R.; Hall, S.; Groeseneken, G.; Pantisano, L.; De Gendt, S.; Heyns, M. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014507 

    Hf-based gate stacks will replace SiON as a gate dielectric even though our understanding of them is incomplete. For an unoptimized SiO2 layer, an exposure to H2 at a temperature over 450 °C can lead to positive charging. In this work, we will show that a thermal exposure of Hf-based gate...

  • An Analysis of Electron Direct Tunneling Current through a High-K MOS Capacitor by Including the Effect of a Trap between HfO2 and SiO2 Interfaces. Sahdan, Muhammad F.; Achmari, Panji; Noor, Fatimah A.; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal // AIP Conference Proceedings;12/10/2011, Vol. 1415 Issue 1, p75 

    An analytical model of electron transmittance and tunneling current in an anisotropic n+poly-Si/HfO2/SiO2/Si (100) metal-oxide-semiconductor capacitor by including a trap between n+ and SiO2 interfaces has been derived. It considers the coupling of electron transverse and longitudinal motions...

  • Effects of aging on the 1/f noise of metal-oxide-semiconductor field effect transistors. Zhou, X. J.; Fleetwood, D. M.; Danciu, I.; Dasgupta, A.; Francis, S. A.; Touboul, A. D. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p173501 

    The 1/f noise magnitude of n-channel metal-oxide-semiconductor field effect transistors is found to decrease by up a factor of ∼3 after 18 years of room-temperature aging. This decrease is largest in devices with high-temperature post-gate-oxidation N2 annealing, which increases the...

  • Interface state buildup by high-field stressing in various metal-oxide-semiconductor insulators.... Belkouch, S.; Jean, C. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p530 

    Examines the buildup of interface states with high field stressing in metal-oxide-semiconductor (MOS) insulators. Use of deep level transient spectroscopy to assess the buildup of interface states; Effect of nitrogen on oxidant diffusion; Relevance of dielectric integrity of gate oxides to MOS...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics