Passivation of (111) Si/SiO[sub 2] interface by fluorine

Wang, X.W.; Ma, T.P.
May 1992
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2634
Academic Journal
Examines the effect of fluorine on the radiation hardness of (111) silicon/silicon dioxide interface. Distribution of interface traps for a set of x-ray irradiated metal oxide semiconductors capacitors; Monotical improvement of radiation-induced interface traps; Passivation of the precursor for the formation of the characteristic defect.


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