TITLE

Direct observation of Si delta-doped GaAs by transmission electron microscopy

AUTHOR(S)
Liu, D.G.; Fan, J.C.; Lee, C.P.; Tsai, C.M.; Chang, K.H.; Liou, D.C.; Lee, T.L.; Chen, L.J.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2628
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the dopant distribution of the silicon delta-doped gallium arsenide by transmission electron spectroscopy. Observation of different silicon doses from half a monolayer to two monolayers; Indication of excellent confinement of dopants in gallium arsenide; Uniform distribution of silicon atoms in the doped layer.
ACCESSION #
4293933

 

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