TITLE

Method to obtain uniform bookshelf textures in smectic C[sup *] liquid crystals

AUTHOR(S)
Jakli, A.; Saupe, A.
PUB. DATE
May 1992
SOURCE
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2622
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a method in creating a homogeneous bookshelf texture in thin films of ferroelectric smectic C[sup *] material phases. Simultaneous application of a shearing and electric field; Stability of the textures; Succession of the transmitted light intensity with the stripes; Formation of the two types of domain.
ACCESSION #
4293931

 

Related Articles

  • Distribution of nonequilibrium charge carriers in a nonlinear thin-film capacitor. Volpyas, V. A.; Gagarin, A. G.; Kozyrev, A. B.; Altynnikov, A. G. // Technical Physics Letters;Oct2007, Vol. 33 Issue 10, p844 

    The process of capacitance relaxation between stationary states determined by different values of the bias voltage has been measured and analyzed for a nonlinear thin-film BSTO capacitor. A method used to measure the dynamic capacitance-voltage characteristics is described. The diffusion...

  • Observation of magnetoelectric coupling in Bi0.7Dy0.3FeO3 thin films at room temperature. Palkar, V. R.; Prashanthi, K. // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p132906 

    Spatial coexistence of ferroelectric and magnetic domains in micrometer scale is confirmed by multimode scanning probe microscopy of pulsed laser deposited Bi0.7Dy0.3FeO3 thin films. The observed change in ferroelectric polarization with applied magnetic field proves the coupling between...

  • Diodelike and resistive hysteresis behavior of heterolayered BiFeO3/ZnO ferroelectric thin films. Jiagang Wu; Wang, John // Journal of Applied Physics;Nov2010, Vol. 108 Issue 9, p094107 

    BiFeO3/ZnO, ZnO/BiFeO3, BiFeO3/ZnO/BiFeO3, and ZnO/BiFeO3/ZnO thin film heterostructures were deposited on SrRuO3/Pt(111)/TiO2/SiO2/Si(100) substrates by off-axis radio frequency sputtering. Their diodelike and resistive hysteresis behavior are dependent on the combination sequence of the...

  • Reversible high-speed electrostatic 'contact'. Baginsky, I.; Kostsov, E. // Semiconductors;Dec2010, Vol. 44 Issue 13, p1654 

    The specific features of the formation of a reversible contact in a structure composed of a mobile electrode and a high-permittivity ferroelectric under a voltage pulse have been investigated. It is shown that, using a ferroelectric film, one can form an anomalously high density of electric...

  • The Effect of Optical Radiation on the Semiconductor Conductivity in a Thin-Film Ferroelectric–Semiconductor Structure. Afanas'ev, V. P.; Bulat, D. Yu.; Kaptelov, E. Yu.; Pronin, I. P. // Technical Physics Letters;Jun2004, Vol. 30 Issue 6, p518 

    We have studied the effect of optical radiation on the conductivity of a thin-film field-effect transistor based on a multilayer structure of the Si–SiO2–Pt–PZT–SnO2 – x–Pt type. Within the permissible radiation dose, the conducting channel exhibits a...

  • Focus Section: A room-temperature electrical field-controlled magnetic memory cell. Cavaco, C.; Van Kampen, M.; Lagae, L.; Borghs, G. // Journal of Materials Research;Aug2007, Vol. 22 Issue 8, p7 

    We present a method that allows changing the anisotropy and the magnetic characteristics of piezoelectric-ferromagnetic hybrid structures by electric fields, thereby suppressing the need for external or local magnetic fields. We have investigated the magnetic properties of single Co50Fe50 and...

  • A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers. Ming-Feng Chang; Po-Tsung Lee; McAlister, S. P.; Chin, Albert // Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p233302 

    We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a...

  • Electric-field-controlled directional motion of ferroelectric domain walls in multiferroic BiFeO3 films. Kim, T. H.; Baek, S. H.; Yang, S. M.; Jang, S. Y.; Ortiz, D.; Song, T. K.; Chung, J.-S.; Eom, C. B.; Noh, T. W.; Yoon, J.-G. // Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p262902 

    We describe the directional ferroelectric domain wall motion in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A structural analysis of the film shows that a strain gradient is developed in our film, which creates a symmetry breaking in a...

  • Observation of photoassisted polarization switching in BiFeO3 thin films probed by terahertz radiation. Takahashi, Kouhei; Tonouchi, Masayoshi // Applied Physics Letters;1/29/2007, Vol. 90 Issue 5, p052908 

    The authors have examined the effect of photoexcitation in a multiferroic BiFeO3 thin film using terahertz radiation as the probe. The illumination of femtosecond laser pulses with a center wavelength of 400 nm gave rise to a significant improvement in the polarization switching process by the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics