Gallium arsenide surface reconstructions during organometallic vapor-phase epitaxy

Lamelas, F.J.; Fuoss, P.H.; Imperatori, P.; Kisker, D.W.; Stephenson, G.B.; Brennan, S.
May 1992
Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2610
Academic Journal
Examines the surface x-ray scattering as a probe of the reconstructions present on the gallium arsenide(001) surface during vapor-phase epitaxy. Formation of a c(4 by 4) arsenide structure; Disappearance of the reconstructions during the layer-by-layer growth of GaAs; Achievement of the integrated intensities at reciprocal lattice point.


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