Electron beam-induced absorption modulation imaging of strained In[sub 0.2]Ga[sub 0.8]As/GaAs

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p394
Academic Journal
Examines the effect of electron-hole plasma generation on excitonic absorption in nipi-doped In[sub 0.2]Ga[sub 0.8]As/GaAs multiple quantum wells (MQW). Use of high-energy electron beam; Study of the MQW absorption modulation; Influence of structural defects on carrier diffusive transport.


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