Abrupt compositional transition in luminescent Si[sub 1--x]Ge[sub x]/Si quantum well structures

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p388
Academic Journal
Examines the growth of luminescent Si[sub 1-x]Ge[sub x]/silicon single quantum well (QW) structures by segregant assisted growth (SAG) using antimony (Sb) layer. Effect of surface segregation on emission energy; Fabrication of light emitting p-i-n diode structure by incorporating Sb during SAG; Growth of QW samples by molecular beam epitaxy.


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