Photoluminescence of high-quality SiGe quantum wells grown by molecular beam epitaxy

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p376
Academic Journal
Examines the photoluminescence (PL) of silicon germanium (SiGe) quantum wells (QW) grown by solid-source molecular beam epitaxy. Observation of well-resolved PL signals from SiGe QW; Employment of chemical vapor deposition technique for single or multiple QW; Influence of growth temperature and QW width on PL properties.


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