TITLE

Hole generation by icosahedral B[sub 12] in high-dose boron as-implanted silicon

PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p373
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the hole generation by icosahedral boron (B)[sub 12] in high-dose B as-implanted silicon. Function of B[sub 12] icosahedra as a double acceptor; Fabrication of shallow junctions with high impurity concentration in integrated circuits; Use of x-ray photoelectron spectroscopy and Fourier transform infrared absorption spectrum.
ACCESSION #
4292162

 

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