Hole generation by icosahedral B[sub 12] in high-dose boron as-implanted silicon

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p373
Academic Journal
Examines the hole generation by icosahedral boron (B)[sub 12] in high-dose B as-implanted silicon. Function of B[sub 12] icosahedra as a double acceptor; Fabrication of shallow junctions with high impurity concentration in integrated circuits; Use of x-ray photoelectron spectroscopy and Fourier transform infrared absorption spectrum.


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