TITLE

Room-temperature electron mobility in strained Si/SiGe heterostructures

PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p367
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the electron transport measurements in modulation-doped strained silicon (Si)/Si-germanium heterostructures. Growth of the heterostructures by ultrahigh-vacuum chemical vapor deposition; Effects of combining the light in-plane mass and intervalley scattering; Comparison of electron mobility with relaxed Si.
ACCESSION #
4292160

 

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