Intersubband transitions in high indium content InGaAs/AlGaAs quantum wells

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p364
Academic Journal
Observes the intersubband transitions in indium gallium arsenide (InGaAs)/aluminum gallium arsenide quantum wells. Growth of quantum wells on a GaAs substrate; Role of InGaAs buffer for strain relaxation; Extension of conduction band offsets to intersubband transition energies.


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