Deep hole traps in p-type nitrogen-doped ZnSe grown by molecular beam epitaxy

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p358
Academic Journal
Investigates p-type nitrogen-doped zinc selenide (ZnSe) grown on n[sup +]-gallium arsenide by molecular beam epitaxy. Achievement of ZnSe p-type doping with active nitrogen beam; Production of nitrogen beam by a free-radical plasma source; Detection of four hole traps by deep-level transient spectroscopy.


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