TITLE

Fabrication of GaAs quantum wires (...10nm) by metalorganic chemical vapor selective deposition

PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p355
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates gallium arsenide triangular-shaped quantum wires by metalorganic chemical vapor selective deposition growth technique. Determination of the lateral dimension by photoluminescence measurement; Change in the size of the quantum wire; Demonstration of enhanced two-dimensional quantum confinement.
ACCESSION #
4292156

 

Related Articles

  • Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition. Fukui, Takashi; Ando, Seigo; Fukai, Yoshino K. // Applied Physics Letters;9/17/1990, Vol. 57 Issue 12, p1209 

    GaAs quantum wires of a new type are fabricated on {110} crystallographic facets perpendicular to the (111)B substrates by selective area growth using metalorganic chemical vapor deposition. First, rectangular-shaped AlGaAs layers are grown on a SiO2 stripe-masked GaAs (111)B substrate at a high...

  • Photoluminescence properties of 13x13 nm GaAs quantum wires buried in trench structures reduced.... Sogawa, T.; Ando, S. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1087 

    Examines the photoluminescence (PL) properties of gallium arsenide quantum wires through chemical vapor deposition. Determination of PL polarization anisotropy; Mechanism for eliminating undesired emission levels of the quantum wires; Factors affecting PL properties.

  • Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor.... Takahashi, T.; Arakawa, Y. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p68 

    Examines the fabrication of gallium arsenide wire structure by electron beam induced metalorganic chemical vapor deposition. Dependence of growth on source material and type of substrate; Range of temperature used in the study; Decomposition of tri-methyl-gallium by electron beam irradiation.

  • GaAs p-n junction formed in quantum wire crystals. Haraguchi, Keiichi; Katsuyama, Toshio // Applied Physics Letters;2/10/1992, Vol. 60 Issue 6, p745 

    Forms a p-n junction in a cross-sectional area of a gallium arsenide wire crystal. Employment of the ultrafine cylindrical growth by metalorganic vapor phase epitaxy; Observation of intensive light emission by current injection; Possibility of ultrafine optoelectronic devices with quantum-size...

  • Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition. Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D. // Applied Physics Letters;10/13/1986, Vol. 49 Issue 15, p945 

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (111)Ga planes with 6 μm periodicity. Charge collection microscopy was used to...

  • Grown-in defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition under different growth conditions. Li, Sheng S.; Lee, D. H.; Choi, C. G.; Andrews, J. E. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1180 

    Studies of the grown-in defects in multi-epilayer GaAs (with/without a buffer layer) grown by metalorganic chemical vapor deposition under different [AsH3]/[TMGa] ratios, growth temperatures, and growth rates have been made in this letter by the deep level transient spectroscopy method. For...

  • Laser selective deposition of GaAs on Si. Bedair, S. M.; Whisnant, J. K.; Karam, N. H.; Tischler, M. A.; Katsuyama, T. // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p174 

    GaAs films have been selectively deposited on Si substrates by laser induced chemical vapor deposition. An Ar+ laser was used to provide the required local heating on an otherwise relatively cool substrate to deposit GaAs spots and write GaAs lines. The deposition parameters were adjusted to...

  • Characterization of GaAs grown by metalorganic chemical vapor deposition on Si-on-insulator. Pearton, S. J.; Vernon, S. M.; Short, K. T.; Brown, J. M.; Abernathy, C. R.; Caruso, R.; Chu, S. N. G.; Haven, V. E.; Bunker, S. N. // Applied Physics Letters;10/12/1987, Vol. 51 Issue 15, p1188 

    Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield,...

  • Structure and polarity of {111} CdTe on {100} GaAs. Glanvill, S. R.; Rossouw, C. J.; Kwietniak, M. S.; Pain, G. N.; Warminski, T.; Wielunski, L. S. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p619 

    Reports on the use of ultramicrotome techniques to prepare thin cross sections of a CdTe epilayer deposited by metalorganic chemical vapor deposition onto a gallium arsenide substrate. Preparation of the epilayers; Results.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics