Solid-phase regrowth of amorphous GaAs grown by low-temperature molecular-beam epitaxy

July 1993
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p320
Academic Journal
Examines the formation of a single-crystal film by solid-phase recrystallization of an amorphous gallium arsenide film. Degree of precipitation in the as-grown amorphous films; Growth of films by low-temperature molecular beam epitaxy; Relationship between carrier concentration and mobility.


Related Articles

  • Amorphization and solid-phase epitaxial growth in tin-ion-implanted gallium arsenide. Taniwaki, Masafumi; Koide, Hideto; Yoshimoto, Naoto; Yoshiie, Toshimasa; Ohnuki, Somei; Maeda, Masao; Sassa, Koichi // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4036 

    Presents a study that evaluated the amorphization and recrystallization of tin-ion-implanted gallium arsenide semiconductors. Analysis of the amorphous-crystalline interface; Examination of the structural changes in the semiconductor; Contribution of stress to the amorphous-crystalline interface.

  • Heat-source power requirements for high-quality recrystallization of thin silicon films for electronic devices. Miaoulis, Ioannis N.; Mikic, Bora B. // Journal of Applied Physics;3/1/1986, Vol. 59 Issue 5, p1658 

    Describes an approximate procedure for estimation of the power requirements for the melting and recrystallization of thin silicon films for electronic devices. Heat sources examined; Information on the silicon film melting process; Effect of the change of phase.

  • Solid phase recrystallization in molecular beam deposited gallium arsenide. Kanata, T.; Takakura, H.; Hamakawa, Y. // Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p706 

    A series of experimental investigations on the solid phase recrystallization of molecular beam deposited gallium arsenide films on silicon dioxide/tantalum/nickel substrates has been performed. The activation energy for recrystallization is unexpectedly small (0.55 eV) in the temperature range...

  • Recrystallization of high energy As-implanted GaAs studied by transmission electron microscopy. Jasinski, J.; Chen, Y. // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1501 

    Investigates ion implantation damage and regrowth process during thermal annealing of arsenic-ion-implanted gallium arsenide by transmission electron microscopy. Formation of high density of stacking faults during recrystallization process; Proposal for an atomic model on the formation of...

  • Different recrystallization patterns of Si...implanted GaAs. Desnica-Frankovic, I.D. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7587 

    Presents information on a study that investigated how the differences in the initial types of implantation-introduced damage influence the processes of crystal lattice restoration. Experimental techniques in semi-insulating gallium arsenide (GaAs) implantation; Raman spectra from GaAs implanted;...

  • Multilevel construction of seeded-laterally epitaxial silicon films on insulator. Hamasaki, T.; Inoue, T.; Yoshimi, M.; Yoshii, T.; Tango, H. // Journal of Applied Physics;7/1/1987, Vol. 62 Issue 1, p126 

    Proposes a seed structure known as partially thickened silicon films on insulator (SOI) for multilevel seeded-laterally epitaxial silicon films on insulator. Dynamic simulation of recrystallization process; Overview of the SOI recrystallization process; Description of the bumpy surfaces...

  • A heat transfer algorithm for the laser-induced melting and recrystallization of thin silicon layers. Grigoropoulos, Costas P.; Buckholz, Richard H.; Domoto, Gerald A. // Journal of Applied Physics;10/1/1986, Vol. 60 Issue 7, p2304 

    Presents information on a study which described some numerical calculations for the temperature fields associated with laser melting and subsequent recrystallization of a thin silicon film on a conductive glass substrate. Sketch of the silicon layer and the substrate structure; Calculations...

  • Recrystallization kinetics of electroplated Cu in damascene trenches at room temperature. Lingk, C.; Gross, M. E. // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5547 

    Discusses the influence of topography on the dynamics of recrystallization of electroplated copper (Cu) thin films. Factors for the effect of topography on the recrystallization process; Why electroplating is emerging as a method of choice for the copper deposition; Conclusion.

  • The deposition of a GaS epitaxial film on GaAs using an exchange reaction. Xin, Q.-S.; Conrad, S.; Zhu, X.-Y. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1244 

    A GaS thin film has been formed epitaxially on GaAs(100) using a photoassisted growth-etching reaction between H2S and the GaAs substrate. In the reaction, the growth of GaS is accomplished via the replacement of As in the GaAs lattice by the photochemically generated S atom, while As is etched...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics