TITLE

Solid-phase regrowth of amorphous GaAs grown by low-temperature molecular-beam epitaxy

PUB. DATE
July 1993
SOURCE
Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p320
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of a single-crystal film by solid-phase recrystallization of an amorphous gallium arsenide film. Degree of precipitation in the as-grown amorphous films; Growth of films by low-temperature molecular beam epitaxy; Relationship between carrier concentration and mobility.
ACCESSION #
4292144

 

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