Selective-area room temperature visible photoluminescence from SiC/Si heterostructures

Steckl, A.J.; Su, J.N.; Xu, J.; Li, J.P.; Yuan, C.; Yih, P.H.; Mogul, H.C.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1419
Academic Journal
Examines the production of selective-area room temperature visible photoluminescence (PL) from silicon carbide (SiC)/Si heterostructures. Use of CHF[sub 3]/oxygen gas in the reactive ion etching of the materials; Effect of short anodization time on PL peak; Transmission of field emission through the wide-gap SiC layer.


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