TITLE

High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition

AUTHOR(S)
Chen, C.-P.; Chang, Y.A.; Huang, J.-W.; Kuech, T.F.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1413
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the Schottky barrier height of the aluminum/n-gallium arsenide diodes fabricated by sputter deposition. Use of scanning Auger microscopy and deep-level transient spectroscopy; Increase of barrier height after annealing; Attribution of the current voltage and capacitance voltage measurement discrepancies to deep levels in the substrates.
ACCESSION #
4289596

 

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