TITLE

Formation of cylindrical n/p junction diodes by arsenic enhanced diffusion along interfacial

AUTHOR(S)
Braga, N.; Buczkowski, A.; Kirk, H.R.; Rozgonyi, G.A.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1410
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the formation of cylindrical n/p junction diodes by arsenic diffusion along interfacial misfit dislocations in p-type epitaxial silicon (Si)/Si germanium heterostructures. Use of scanning electron microscopy; Comparison between the dislocation diffusion coefficient of arsenic and host crystal; Basis on the isoconcentration etching profile.
ACCESSION #
4289595

 

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