TITLE

Optical and electrical properties of titanium dioxide films with a high magnitude dielectric

AUTHOR(S)
Kim, T.W.; Jung, M.; Kim, H.J.; Park, T.H.; Yoon, Y.S.; Kang, W.N.; Yom, S.S.; Na, H.K.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1407
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optical and electrical properties of titanium dioxide thin films with high magnitude dielectric constant grown on p-silicon by metalorganic chemical vapor deposition at low temperature. Surface morphology; Use of x-ray diffraction analysis and Raman spectroscopy; Film stoichiometry.
ACCESSION #
4289594

 

Related Articles

  • Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic.... Jellison Jr., G.E.; Chisholm, M.F.; Gorbatkin, S.M. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3348 

    Examines the optical functions of chemical vapor deposited thin-film silicon (Si) using spectroscopic ellipsometry. Simulation on the standard technique for the optical functions of polycrystalline Si; Use of transmission electron microscopy in measuring film thickness.

  • Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using.... Sato, Hitoshi; Takahashi, Hirokazu // Applied Physics Letters;6/17/1996, Vol. 68 Issue 25, p3617 

    Examines the optical properties of gallium nitride films fabricated on sapphire substrates by metalorganic chemical vapor deposition. Use of dimethylhydrazine as a nitrogen source; Details on the photoluminescence spectra of the films; Application of GaN to optoelectronic devices.

  • Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to... Guozhen Yue; Lorentzen, J.D. // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p492 

    Reports on the measurement of photoluminescence (PL) and Raman spectra for thin films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. Increase in PL peak energy; Redshift of the peak position.

  • Determination of optical dispersion and film thickness of semiconducting disordered layers by.... Davazoglou, D. // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p246 

    Presents a method for determining the optical dispersion and thickness of thin semiconducting layers deposited on transparent substrates using transmission measurements. Use of Forouhi and Bloomer physical model for amorphous semiconductors and standard regression analysis; Effectiveness of the...

  • Spectroellipsometry characterization of optical quality vapor-deposited diamond thin films. Yue Cong; Collins, R.W.; Epps, Glenn F.; Windischmann, H. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p819 

    Describes a spectroellipsometry study of diamond thin films prepared by microwave plasma-assisted chemical vapor deposition. Quantitative characterizational methods; Volume fraction of sp[sup 2]-bonded defects in bulk; Thickness of the roughness layer on the surface.

  • Optical characterization of GaN films by photoreflectance and photocurrent measurement. Qin, L. H.; Zheng, Y. D.; Feng, D.; Huang, Z. C.; Chen, J. C. // Journal of Applied Physics;12/15/1995, Vol. 78 Issue 12, p7424 

    Presents information on a study which characterized the optical properties of single crystal hexagonal gallium nitride films on sapphire grown by metalorganic chemical vapor deposition. Energy gap of gallium nitride films.

  • Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition. Andry, P.S.; Varhue, W.J. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p551 

    Reports on a study which aims to grow homoepitaxial Er-doped Si films with high photoluminescence (PL) output efficiency by employing a metalorganic (MO) compound in a plasma-enhanced chemical vapor deposition (PECVD) process. Preparation and characterization of the sample; Comparison of MO...

  • Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-xInxP multilayers. Tsai, Yu-Li; Horng, Ray-Hua; Liu, Po-Liang; Tseng, Ming-Chun; Lin, Der-Yuh; Wuu, Dong-Sing // Journal of Applied Physics;Sep2009, Vol. 106 Issue 6, p063517-1 

    In this paper, we report on the influence of compositionally step-graded Ga1-xInxP multilayers on the microstructural and optical properties of In-rich Ga0.46In0.54P film grown on a GaAs substrate. Based on the transmission electron microscope observation, the growth of Ga0.46In0.54P on GaAs was...

  • Laser Annealing of Flash-Evaporated CuInSe2 Thin Films. Ahmed, E.; Amar, M.; Ahmed, W.; Pilkington, R. D.; Hill, A. E.; Jackson, M. J. // Journal of Materials Engineering & Performance;Apr2006, Vol. 15 Issue 2, p8 

    In this paper, the impact of laser annealing on the structural, electrical, and optical properties of CuInSeM2 (CIS) thin films has been investigated. The films were deposited using a modified flash evaporation system onto glass substrates. Structural analysis using x-ray diffraction (XRD)...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics