TITLE

Secondary electron emission from Si-implanted GaAs

AUTHOR(S)
Iwase, F.; Nakamura, Y.; Furuya, S.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1404
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the dependence of secondary electron emission on the electric properties of silicon implanted gallium arsenide surfaces. Use of cross-sectional scanning electron microscopy; Influence of isothermal annealing at 800 degree Celsius for 30 minutes on the electron yield; Increase of electron yield by the activation efficiency reducing defects.
ACCESSION #
4289593

 

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