Secondary electron emission from Si-implanted GaAs

Iwase, F.; Nakamura, Y.; Furuya, S.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1404
Academic Journal
Examines the dependence of secondary electron emission on the electric properties of silicon implanted gallium arsenide surfaces. Use of cross-sectional scanning electron microscopy; Influence of isothermal annealing at 800 degree Celsius for 30 minutes on the electron yield; Increase of electron yield by the activation efficiency reducing defects.


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