Optical and electrical degradations of GaAs-based laser diodes grown on Si substrates

Egawa, T.; Jimbo, T.; Hasegawa, Y.; Umeno, M.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1401
Academic Journal
Examines the electrical and optical characteristic degradation of aluminum gallium arsenide/gallium arsenide laser diodes on silicon substrates. Initial deterioration of a p-n junction of the material; Cause of optical deterioration in electroluminescence; Effect of dislocation density and tensile stress on deterioration.


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