TITLE

Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped

AUTHOR(S)
Lee, N.-E.; Tomasch, G.A.; Xue, G.; Market, L.C.; Greene, J.E.
PUB. DATE
March 1994
SOURCE
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1398
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effectiveness of ultrahigh vacuum ion beam sputter deposition for fabricating high quality epitaxial semiconducting layers. Application of the technique using antimony-doped silicon(001)2x1 films grown on p-type silicon substrates; Techniques used in the analysis of fabricated materials; Electronic characteristics of the thin films.
ACCESSION #
4289591

 

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