Crystal growth and electronic properties of ultrahigh vacuum ion-beam sputter deposited Sb-doped

Lee, N.-E.; Tomasch, G.A.; Xue, G.; Market, L.C.; Greene, J.E.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1398
Academic Journal
Examines the effectiveness of ultrahigh vacuum ion beam sputter deposition for fabricating high quality epitaxial semiconducting layers. Application of the technique using antimony-doped silicon(001)2x1 films grown on p-type silicon substrates; Techniques used in the analysis of fabricated materials; Electronic characteristics of the thin films.


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