Germanium- and silicon-doped indium-oxide thin films prepared by radio-frequency magnetron

Maruyama, Toshiro; Tago, Teruoki
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1395
Academic Journal
Examines the preparation of germanium- and silicon-doped indium-oxide thin films by radio-frequency magnetron sputtering method. Carrier concentrations and Hall mobilities of the materials; Dependence of film resistivity on atomic ratio; Measurement of film composition by x-ray photoelectron spectroscopy.


Related Articles

  • Effects of annealing temperature on the carrier concentrations, the carrier mobilities and the quality of nitrogen doped ZnO films deposited by magnetron sputtering. Jongmin Lim; Kyoungchul Shin; Chongmu Lee // Journal of Materials Science;May2004, Vol. 39 Issue 9, p3195 

    Discusses the effects of annealing temperature on the carrier concentrations, the carrier mobilities, and the quality of nitrogen doped zinc oxide thin films deposited by magnetron sputtering. Potential of high efficiency in emitting short wave length laser; Effects of the flow ratio of nitrogen...

  • Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system. Li-Wen Lai; Jheng-Tai Yan; Chia-Hsun Chen; Li-Ren Lou; Ching-Ting Lee // Journal of Materials Research;Jul2009, Vol. 24 Issue 7, p12 

    AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N2/(N2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AlN codoped ZnO films with various crystallographic...

  • Effect of a Ta-Si-N diffusion barrier on the texture formation in thin Cu films. Hübner, R. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p093512 

    Analyzing pole figures obtained by x-ray diffraction experiments, quantitative texture analyses are carried out on 50 nm thick Cu films sputter-deposited on oxidized Si substrates and on Ta-Si-N diffusion barrier films of various compositions. To explain the observed Cu texture formation during...

  • The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors. Lei Xu; Chun-Wei Huang; Abliz, Ablat; Yang Hua; Lei Liao; Wen-Wei Wu; Xiangheng Xiao; Changzhong Jiang; Wei Liu; Jinchai Li // Applied Physics Letters;2/2/2015, Vol. 106 Issue 5, p1 

    To improve the performance of ZnO thin film transistors (TFTs) by using appropriate metal contacts, the different roles of contact materials between oxidation interlayer and doping effect are investigated. With careful characterization, an oxidation interlayer has been verified at the interface...

  • Production of thin film silicon-doped hydroxyapatite via sputter deposition. Porter, A. E.; Rea, S. M.; Galtrey, M.; Best, S. M.; Barber, Z. H. // Journal of Materials Science;Mar2004, Vol. 39 Issue 5, p1895 

    Discusses the production of thin film silicon-doped hydroxyapatite via sputter deposition. Relative positions of titanium substrates during silicon-doped hydroxyapatite sputter deposition and resulting film composition; Effect of heat-treatment time on texture and crystallinity of thin film...

  • Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting. Shet, Sudhakar; Kwang-Soon Ahn; Deutsch, Todd; Heli Wang; Ravindra, Nuggehalli; Yanfa Yan; Turner, John; Al-Jassim, Mowafak // Journal of Materials Research;Jan2010, Vol. 25 Issue 1, p7 

    ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO:(Al,N) thin films exhibited significantly...

  • Second order optical nonlinearity of ZnO/ZnO:Al bilayers deposited on glass by low temperature radio frequency sputtering. Michelotti, F.; Canali, R.; Dominici, L.; Belardini, A.; Menchini, F.; Schoer, G.; Mueller, J. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p181110 

    The authors report on the measurement of the second order nonlinear optical properties of ZnO films deposited by low temperature radio frequency sputtering on ZnO:Al coated glass substrates. They show that ZnO:Al plays a crucial role as a buffer layer for the successive growth of ZnO. The effect...

  • Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique. Ghosh, S.; Srivastava, P.; Pandey, B.; Saurav, M.; Bharadwaj, P.; Avasthi, D. K.; Kabiraj, D.; Shivaprasad, S. M. // Applied Physics A: Materials Science & Processing;Mar2008, Vol. 90 Issue 4, p765 

    Zinc oxide (ZnO) and Ni-doped zinc oxide (ZnO:Ni) films are prepared by atom beam sputtering with an intent of growing transparent conducting oxide (TCO) material and understanding its physical properties. The crystalline phases of the films are identified by the grazing angle X-ray diffraction...

  • Structure, conductivity, and transparency of Ga-doped ZnO thin films arising from thickness contributions. Liang, Shuang; Bi, Xiaofang // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113533 

    Ga-doped ZnO (GZO) films were deposited on amorphous glass substrates at room temperature by radio frequency magnetron sputtering. It is revealed that the influence of deposition parameters, such as target-substrate distance and deposition time, on the structure and properties of the films...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics