2000 V 6H-SiC p-n junction diodes grown by chemical vapor deposition

Neudeck, Philip G.; Larkin, David J.; Powell, J. Anthony; Matus, Lawrence G.; Salupo, Carl S.
March 1994
Applied Physics Letters;3/14/1994, Vol. 64 Issue 11, p1386
Academic Journal
Details the fabrication and initial electrical characterization of SiC diodes to demonstrate rectification to reverse voltages in excess of 2000 Volts at room temperature. Use of atmospheric pressure chemical vapor deposition; Solution used for the SiC diode immersion; Functional device yield of the materials.


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